Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror
A. Kasukawa(Furukawa Electric (Japan)), N. Yokouchi(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine)
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