Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror

A. Kasukawa(Furukawa Electric (Japan)), N. Yokouchi(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine)
IEEE Journal of Selected Topics in Quantum Electronics
June 1, 1995
Cited by 9


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