Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm

N. Yokouchi(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), Y. Nakahira(Furukawa Electric (Japan))
IEEE Journal of Quantum Electronics
January 1, 1996
Cited by 20


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