Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm
N. Yokouchi(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), Y. Nakahira(Furukawa Electric (Japan))
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