Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors
Huaxing Jiang(South China University of Technology), Kei May Lau(Hong Kong University of Science and Technology), Renqiang Zhu(Hong Kong University of Science and Technology), Qifeng Lyu(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology)
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