Magnetoconductance and quantized confinement in narrow silicon inversion layersW. J. Skocpol, D. M. Tennant, Linus A. Fetter et al.|Surface Science|1984Cited by 53
50−nm silicon structures fabricated with trilevel electron beam resist and reactive-ion etchingL. D. Jackel, P. Grabbe, Richard Howard et al.|Applied Physics Letters|1981Cited by 44
400-Å linewidth <i>e</i>-beam lithography on thick silicon substratesRichard Howard, D. M. Tennant, Evelyn L. Hu et al.|Applied Physics Letters|1980Cited by 32
Twenty-five nm features patterned with trilevel e-beam resistD. M. Tennant, B. S. Schneider, R.J. Capik et al.|Journal of Vacuum Science and Technology|1981Cited by 26