3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode StructureRu Xu, Youdou Zheng, Peng Chen et al.|IEEE Electron Device Letters|2021Cited by 41
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <i>p-n</i> Junction TerminationRu Xu, Youdou Zheng, Yimeng Li et al.|IEEE Journal of the Electron Devices Society|2020Cited by 36
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structureRu Xu, Youdou Zheng, Peng Chen et al.|Solid-State Electronics|2020Cited by 26
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode SpacingRu Xu, Youdou Zheng, Peng Chen et al.|Small|2022Cited by 5
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)Ru Xu, Youdou Zheng, Peng Chen et al.|Small|2022Cited by 2