3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure
Ru Xu(Nanjing University), Youdou Zheng(Collaborative Innovation Center of Advanced Microstructures), Kai Cheng(Nanopolis Suzhou (China)), Rong Zhang(Nanjing University of Science and Technology), Yimeng Li(Central South University), Jing Zhou(Nanjing University), Zili Xie(Nanjing University), Bin Liu(Nanjing University of Science and Technology), Dunjun Chen(Nanjing University), Menghan Liu(Nanjing University), Peng Chen(Nanjing University)
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