1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <i>p-n</i> Junction Termination

Ru Xu(Nanjing University), Youdou Zheng(Collaborative Innovation Center of Advanced Microstructures), Haocheng Peng(Nanjing University), Peng Chen(Nanjing University), Rong Zhang(Nanjing University of Science and Technology), Yimeng Li(Central South University), Jing Zhou(Nanjing University), Zili Xie(Nanjing University), Yunfei Yang(Nanjing University), Bin Liu(Nanjing University of Science and Technology), Dunjun Chen(Nanjing University), Menghan Liu(Nanjing University), Cheng Ge(Nanjing University)
IEEE Journal of the Electron Devices Society
January 1, 2020
10.1109/jeds.2020.2980759
Cited by 36

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