Descriptor: MOSFET Electrical Simulation Dataset (MESD)
Yuhang Zhang(East China Normal University), Yongfu Li(Shanghai Jiao Tong University), Yabin Sun(Shanghai Jiao Tong University), Leilai Shao(Shanghai Jiao Tong University), Longfan Li(Shanghai Jiao Tong University), Yanling Shi(East China Normal University), Kain Lu Low(University of Liverpool), Yanan Sun(Chinese Academy of Medical Sciences & Peking Union Medical College), Jian Zhao(Shanghai Jiao Tong University)
Cited by 6
Related Papers
Electronic band structure and effective mass parameters of Ge1-xSnx alloys
|Journal of Applied Physics|2012|239
Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
|Unknown|2012|59
Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration
|IEEE Transactions on Electron Devices|2013|58
Ballistic Transport Performance of Silicane and Germanane Transistors
|IEEE Transactions on Electron Devices|2014|58
Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
|Journal of Applied Physics|2013|46