Effect of interfacial SiO<sub>2</sub> layer thickness on the memory performances in the HfAlO<sub><i>x</i></sub>-based ferroelectric tunnel junction for a neuromorphic system
Yongjin Park(Dongguk University), Wonbo Shim(Seoul National University of Science and Technology), Jihyung Kim(Dongguk University), Sungjun Kim(Dongguk University), Sunghun Kim(Dongguk University), Dahye Kim(Seoul National University of Science and Technology)
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