Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states
Han‐Wool Yeon(Seoul National University), Young‐Chang Joo(University of Seoul), Jung‐Kyu Jung(Seoul National University), Young Ju Lee(Seoul National University), Yongjin Park(Dongguk University), Miyoung Kim(Seoul National University), Hyobin Yoo(Seoul National University), Ho‐Young Kang(University of Seoul), Seungmin Lim(Seoul National University)
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