SOI FinFET Design Optimization for Radiation Hardening and Performance Enhancement
Yichao Sun(Chinese Academy of Sciences), Bo Li(Chinese Academy of Sciences), Fazhan Zhao(Chinese Academy of Sciences), Qingzhu Zhang(Hebei University of Technology), Zhengsheng Han(Chinese Academy of Sciences), Yujuan He(China Electronic Product Reliability and Environmental Test Institute), Lu Peng(State Administration of Cultural Heritage)
Cited by 14
Related Papers
New structure transistors for advanced technology node CMOS ICs
|National Science Review|2024|136
Impacts of infrastructure construction on ecosystem services in new-type urbanization area of North China Plain
|Resources Conservation and Recycling|2022|82
FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>
|IEEE Electron Device Letters|2019|80
Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation
|IEEE Electron Device Letters|2019|78