TSV Integration With Chip Level TSV-to-Pad Cu/SiO₂ Hybrid Bonding for DRAM Multiple Layer Stacking
Tzu‐Heng Hung(National Yang Ming Chiao Tung University), Kuan‐Neng Chen(National Yang Ming Chiao Tung University), Hsih-Yang Chiu(Nanya Technology (Taiwan)), Chiang-Lin Shih(Nanya Technology (Taiwan)), Jeff J. P. Lin(Nanya Technology (Taiwan)), Weizhong Li, Sheng-Fu Huang(Nanya Technology (Taiwan)), Yen‐Ling Lin(National Yang Ming Chiao Tung University), Hsiang‐Hung Chang(Industrial Technology Research Institute), Tzu-Ying Kuo(Industrial Technology Research Institute), Hanwen Hu(North Sichuan Medical University), James Yi-Jen Lo(Nanya Technology (Taiwan)), Shing-Yih Shih(Nanya Technology (Taiwan))
Cited by 21
Related Papers
Developing Ni single-atom sites in carbon nitride for efficient photocatalytic H2O2 production
|Nature Communications|2023|454
Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)
|Microelectronics Reliability|2021|130
Wrinkled 2D Materials: A Versatile Platform for Low‐Threshold Stretchable Random Lasers
|Advanced Materials|2017|105
Persulfate enhanced photocatalytic degradation of bisphenol A over wasted batteries-derived ZnFe2O4 under visible light
|Journal of Cleaner Production|2020|85
Investigation of bonding mechanism for low-temperature Cu Cu bonding with passivation layer
|Applied Surface Science|2022|76