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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode SpacingRu Xu, Youdou Zheng, Peng Chen et al.|Small|2022Cited by 5
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The Study on the Mode Competition in GaN-based Hexagonal MicrocavityMenghan Liu, Youdou Zheng, Peng Chen et al.|Unknown|2019Cited by 0
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-{\mu}m anode-to-cathode spacingRu Xu, Youdou Zheng, Peng Chen et al.|arXiv (Cornell University)|2021Cited by 0