Effects of H<sub>2</sub> and N<sub>2</sub> treatment for B<sub>2</sub>H<sub>6</sub> dosing process on TiN surfaces during atomic layer deposition: an <i>ab initio</i> study
Hwanyeol Park(Soonchunhyang University), Gun‐Do Lee(University of Seoul), Euijoon Yoon(Seoul National University), Ho Jun Kim(Soonchunhyang University), Sung‐Woo Lee(University of Seoul), Kangsoo Kim(Samsung (South Korea)), Se Jun Park(Samsung (South Korea)), Daekwang Woo(Samsung (South Korea))
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