Room temperature operation of mid-infrared InAs<sub>081</sub>Sb<sub>019</sub> based photovoltaic detectors with an In<sub>02</sub>Al<sub>08</sub>Sb barrier layer grown on GaAs substrates
Dae‐Myeong Geum(Seoul National University), Euijoon Yoon(Seoul National University), Sanghyeon Kim(Korea Institute of Science and Technology), Il Pyo Rho(Korea Institute of Science and Technology), Hwanyeol Park(Soonchunhyang University), Won Jun Choi(Korea Institute of Science and Technology), Jin Dong Song(Korea Institute of Science and Technology), Seung Yeop Ahn(Korea Institute of Science and Technology), Sooseok Kang(Korea Institute of Science and Technology)
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