Room temperature operation of mid-infrared InAs<sub>081</sub>Sb<sub>019</sub> based photovoltaic detectors with an In<sub>02</sub>Al<sub>08</sub>Sb barrier layer grown on GaAs substratesDae‐Myeong Geum, Euijoon Yoon, Sanghyeon Kim et al.|Optics Express|2018Cited by 16