Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential
Xiaoyi Zhang(Jilin University), Gengchiau Liang(Chinese Academy of Sciences), Yee‐Chia Yeo(Agency for Science, Technology and Research), Kain Lu Low(University of Liverpool), Kai‐Tak Lam(University of Florida)
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