Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide MonolayerKai‐Tak Lam, Jing Guo, Xi Cao|IEEE Electron Device Letters|2013Cited by 67
Plasmonics in strained monolayer black phosphorusKai‐Tak Lam, Jing Guo|Journal of Applied Physics|2015Cited by 35
Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body TransistorYan Guo, Gengchiau Liang, Kain Lu Low et al.|IEEE Transactions on Electron Devices|2015Cited by 14
Performance evaluation of MoS<inf>2</inf>-WTe<inf>2</inf> vertical tunneling transistor using real-space quantum simulatorKai‐Tak Lam, Jing Guo, Gyungseon Seol|Unknown|2014Cited by 10
Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic PotentialXiaoyi Zhang, Gengchiau Liang, Kai‐Tak Lam et al.|IEEE Transactions on Electron Devices|2016Cited by 9