An orthogonal 6F/sup 2/ trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM
C. Radens(IBM (United States)), G. Bronner(Rambus (United States)), Michelle E. Seitz(Infineon Technologies (United States)), D. Lea(IBM (United States)), J. Strane(IBM (United States)), Thomas Joseph(IBM (United States)), J. Mandelman(IBM (United States)), U. Gruening(Infineon Technologies (United States)), Kain Lu Low(University of Liverpool), N. Arnold, V.C. Jaiprakash, S. Bukofsky(IBM (United States)), Scott Halle, J. Sim(IBM (United States)), T. Dyer(IBM (United States)), T. Schloesser(Infineon Technologies (Germany)), R. Malik(Infineon Technologies (United States)), L. Nesbit(IBM (United States)), R. Divakaruni, Q. Ye(Infineon Technologies (United States)), C. Dubuc(Infineon Technologies (United States)), L. A. Clevenger(IBM (United States)), D. Casarotto, J. Faltermeier(IBM (United States)), S. Kudelka(Infineon Technologies (United States))
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