Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N<sub>2</sub> doped Ge<sub>2</sub>Sb<sub>2</sub>Te <sub>5</sub> (N-GST) in a Phase-change Random Access Memory
Kinam Kim(University of Houston), Su‐Jin Ahn(Samsung (South Korea)), Won-Cheol Jeong(Samsung (South Korea)), YeoJin Kim(Samsung (South Korea)), Yongjun Song(Seoul Medical Center), Y.N. Hwang(Samsung (South Korea)), J. B. Park(Samsung (South Korea)), Hongsik Jeong(Ulsan National Institute of Science and Technology), Jae‐Min Shin(Samsung (South Korea)), J.H. Park(Samsung (South Korea)), G.T. Jeong(Samsung (South Korea)), K.H. Koh(Samsung (South Korea)), S. H. Lee(Samsung (South Korea)), F. Yeung, C.W. Jeong, Kyung‐Chang Ryoo, J. H. Oh(Korea University)
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