Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)Dahyun Kang, Kinam Kim, F. Yeung et al.|Unknown|2007Cited by 16
Advanced ring type contact technology for high density phase change memoryYongjun Song, Keonhee Kim, J.H. Park et al.|Unknown|2005Cited by 7
Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N<sub>2</sub> doped Ge<sub>2</sub>Sb<sub>2</sub>Te <sub>5</sub> (N-GST) in a Phase-change Random Access MemoryKinam Kim, Yongjun Song, Y.N. Hwang et al.|MRS Proceedings|2004Cited by 6
Integration and cell characteristics for high density PRAMKyung‐Chang Ryoo, Keonhee Kim, Y.N. Hwang et al.|Unknown|2004Cited by 0