Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor
Yan Guo(Fudan University), Gengchiau Liang(Chinese Academy of Sciences), Yee‐Chia Yeo(Agency for Science, Technology and Research), Kain Lu Low(University of Liverpool), Xiaoyi Zhang(Jilin University), Kai‐Tak Lam(University of Florida)
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