Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method
Wei Li(Tokyo Institute of Technology), Hiroshi Iwai(Kyoto University), Nobuyuki Sugii(Tokyo Institute of Technology), Akira Nishiyama(Kagawa University), Chunmeng Dou(Chinese Academy of Sciences), Kazuo Tsutsui(Tokyo Institute of Technology), Kazuhiro Nakajima(Tokyo Institute of Technology), Takeo Hattori(Tokyo Institute of Technology), Parhat Ahmet(National Institute for Materials Science), Kuniyuki Kakushima(Tokyo Institute of Technology), Yoshinori Kataoka(Tokyo Institute of Technology), Kenji Natori(Chiba University)
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