Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier LayerHuaqiang Wu, He Qian, Zhiping Yu et al.|IEEE Electron Device Letters|2013Cited by 62
Stable self-compliance resistive switching in AlO<sub><i>δ</i></sub>/Ta<sub>2</sub>O<sub>5−<i>x</i></sub>/TaO<sub><i>y</i></sub>triple layer devicesHuaqiang Wu, He Qian, Xinyi Li et al.|Nanotechnology|2014Cited by 41