Review of radiation damage in GaN-based materials and devices
S. J. Pearton(University of Florida), Jihyun Kim(Sejong University), A. Y. Polyakov(National University of Science and Technology), Lu Liu(University of Florida), Richard Deist(University of Florida), F. Ren(University of Florida)
Cited by 235
Related Papers
A review of Ga2O3 materials, processing, and devices
|Applied Physics Reviews|2018|3k
GaN: Processing, defects, and devices
|Journal of Applied Physics|1999|1.8k
Wide band gap ferromagnetic semiconductors and oxides
|Journal of Applied Physics|2002|1k
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
|Journal of Applied Physics|2018|633
ZnO nanowire growth and devices
|Materials Science and Engineering R Reports|2004|574