F

F. Ren

University of Florida

ORCID: 0000-0001-9234-019X

Publishes on GaN-based semiconductor devices and materials, Semiconductor materials and devices, Ga2O3 and related materials. 1.9k papers and 47k citations.

PubIndex Score98Top 2%How it's scored

1.9kPublications

47kTotal Citations

First publication: 1983First senior author: 1988

GaN-based semiconductor devices and materials Semiconductor materials and devices Ga2O3 and related materials ZnO doping and properties Semiconductor Quantum Structures and Devices

Top publicationsby citations

A review of Ga2O3 materials, processing, and devices

S. J. Pearton, Michael A. Mastro, Jiancheng Yang et al.|Applied Physics Reviews|2018

Cited by 3k

GaN: Processing, defects, and devices

S. J. Pearton, F. Ren, J.C. Zolper et al.|Journal of Applied Physics|1999

Cited by 1.8k

Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton, L. A. Boatner, C. R. Abernathy et al.|Journal of Applied Physics|2002

Cited by 1k

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton, Jihyun Kim, F. Ren et al.|Journal of Applied Physics|2018

Cited by 633

ZnO nanowire growth and devices

Young-Woo Heo, J. R. LaRoche, D. P. Norton et al.|Materials Science and Engineering R Reports|2004

Cited by 574