Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
S. J. Pearton(United States Naval Research Laboratory), Jihyun Kim(United States Naval Research Laboratory), Marko J. Tadjer(United States Naval Research Laboratory), F. Ren(Chongqing University)
Cited by 633
Related Papers
A review of Ga2O3 materials, processing, and devices
|Applied Physics Reviews|2018|3k
GaN: Processing, defects, and devices
|Journal of Applied Physics|1999|1.8k
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
|Advanced Electronic Materials|2017|1.5k
Wide band gap ferromagnetic semiconductors and oxides
|Journal of Applied Physics|2002|1k
ZnO nanowire growth and devices
|Materials Science and Engineering R Reports|2004|574