Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks
Jan Willem Maes(ASM International (Belgium)), Digh Hisamoto(Hitachi (Japan)), Osamu Tonomura(Hitachi (Japan)), Matty Caymax(IMEC), Masahiko Hiratani(Hitachi (Japan)), Shin’ichiro Kimura(Hitachi (Japan)), Yasuhiro Shimamoto(Hitachi (Japan)), Kazuyoshi Torii(Hitachi (Japan)), Yukiko Manabe(Toyama University Hospital), T. Onai(Hitachi (Japan))
Cited by 69
Related Papers
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189