The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/ gate dielectric
Kazuyoshi Torii(Hitachi (Japan)), Jan Willem Maes(ASM International (Belgium)), Osamu Tonomura(Hitachi (Japan)), Matty Caymax(IMEC), Masahiko Hiratani(Hitachi (Japan)), Y. Manabe(IMEC), Y. Shimamoto(IMEC), Shinichi Saito(University of Southampton)
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