Capacitance-voltage characterization of GaAs–Al2O3 interfaces
Guy Brammertz(IMEC), Marc Heyns(IMEC), W. E. Wang(IMEC), Sonja Sioncke(IMEC), Matty Caymax(IMEC), David Mercier(IMEC), Marc Meuris(IMEC), Koen Martens(IMEC), H. C. Lin(IMEC), Annelies Delabie(IMEC)
Cited by 114
Related Papers
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189