Band alignment at the interface of (100)Si with HfxTa1−xOy high-κ dielectric layers
V. V. Afanas’ev(IMEC), JW Maes(ASM International (Belgium)), Z. M. Rittersma(Philips (Belgium)), A. Stesmans(KU Leuven), Chao Zhao, Matty Caymax(IMEC)
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