Strain relaxation of SiGe islands on compliant oxideH. Yin, James C. Sturm, C. K. Inoki et al.|Journal of Applied Physics|2002Cited by 75
Strain partition of Si/SiGe and SiO2/SiGe on compliant substratesH. Yin, James C. Sturm, Karl D. Hobart et al.|Applied Physics Letters|2003Cited by 33
Reduced buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrateRebecca L. Peterson, James C. Sturm, Karl D. Hobart et al.|Applied Physics Letters|2006Cited by 21
Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET PerformanceH. Yin, James C. Sturm, Karl D. Hobart et al.|IEEE Transactions on Electron Devices|2005Cited by 21
Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substratesRebecca L. Peterson, James C. Sturm, H. Yin et al.|Journal of Applied Physics|2006Cited by 12