Taiwan Semiconductor Manufacturing Company (Taiwan)
Publishes on Thin-Film Transistor Technologies, Organic Electronics and Photovoltaics, Advanced Sensor and Energy Harvesting Materials. 11 papers and 1k citations.
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We have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates. These small displays have 16×16 pixel polymer-dispersed liquid crystal arrays addressed by pentacene active layer OTFTs. The displays were fabricated using a low-temperature process (<110 °C) on flexible polyethylene naphthalate film and are operated as reflective active matrix displays.
We have fabricated and characterized analog and digital circuits using organic thin-film transistors on polyester film substrates. These are the first reported dynamic results for organic circuits fabricated on polyester substrates. The high-performance pentacene transistors yield circuits with the highest reported clock frequencies for organic circuits.
We have fabricated the fastest organic circuits on flexible substrates yet reported. These circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material and 75 /spl mu/m thick flexible, transparent, colorless, polyethylene naphthalate (PEN) film as the substrate. Transistor arrays, inverters, ring oscillators, and other circuits with good electrical performance, yield, and uniformity were obtained. A field-effect mobility of 1 cm/sup 2// V-s was extracted from OTFT saturation characteristics, and ring oscillators had minimum propagation delay <40 /spl mu/sec per stage and <50 /spl mu/sec per stage at bias levels below 8 V.
Abstract We have fabricated and demonstrated active‐matrix liquid‐crystal displays using organic thin‐film transistors (OTFTs) on polyester substrates. This is the first reported demonstration of an OTFT active‐matrix liquid‐crystal display, and also the first demonstration of a TFT active‐matrix liquid‐crystal display of any type fabricated on a polyester substrate.
In this paper, we present thermal dissipation challenges in three dimensional (3D) stacked devices and discuss strategies to tackle these issues through innovations in materials, integrations, and designs. Back-end-of-line (BEOL) compatible aluminum nitride (AlN) and diamond are evaluated and found to be promising dielectric materials to improve thermal dissipation in 3D stacked devices. Insertion of phonon dispersion matched bridging layers is proposed to solve the thermal boundary resistance issue. We also propose a manufacturing compatible in-line metrology for monitoring the thermal conductivity (κ) and heat dissipation characteristics.