Thermal dissipation in stacked devices
Wei‐Yen Woon(Taiwan Semiconductor Manufacturing Company (Taiwan)), Sam Vaziri(Taiwan Semiconductor Manufacturing Company (Taiwan)), Chih‐Cheng Shih(Taiwan Semiconductor Manufacturing Company (Taiwan)), I. Datye(Taiwan Semiconductor Manufacturing Company (Taiwan)), Mohamadali Malakoutian, James T. Hsu(Taiwan Semiconductor Manufacturing Company (Taiwan)), K.F. Yang(Taiwan Semiconductor Manufacturing Company (Taiwan)), J.R. Huang(Taiwan Semiconductor Manufacturing Company (Taiwan)), Ting Shen(Taiwan Semiconductor Manufacturing Company (Taiwan)), Srabanti Chowdhury, X. Y. Bao(Taiwan Semiconductor Manufacturing Company (Taiwan)), Shunyao Liao(Taiwan Semiconductor Manufacturing Company (Taiwan))
Cited by 11
Abstract
In this paper, we present thermal dissipation challenges in three dimensional (3D) stacked devices and discuss strategies to tackle these issues through innovations in materials, integrations, and designs. Back-end-of-line (BEOL) compatible aluminum nitride (AlN) and diamond are evaluated and found to be promising dielectric materials to improve thermal dissipation in 3D stacked devices. Insertion of phonon dispersion matched bridging layers is proposed to solve the thermal boundary resistance issue. We also propose a manufacturing compatible in-line metrology for monitoring the thermal conductivity (κ) and heat dissipation characteristics.
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