Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructuresF. Fischer, K. Neumaier, D. Schuh et al.|Applied Physics Letters|2005Cited by 20
Influence of voltmeter impedance on quantum Hall measurementsF. Fischer, M. Grayson|Journal of Applied Physics|2005Cited by 14
Transport evidence of the lowest Landau-level spin-index anticrossing in (110) GaAs two-dimensional holesF. Fischer, M. Grayson, M. Bichler et al.|Physical Review B|2007Cited by 10
Si as an acceptor in (110) GaAs for high mobility p-type heterostructuresF. Fischer, K. Neumaier, G. Abstreiter et al.|Bulletin of the American Physical Society|2005Cited by 0
Anomalous magnetoresistance peaks: Evidence for Landau level spin-anticrossing in (110) GaAs two-dimensional hole systemsM. Grayson, R. Winkler, S. F. Roth et al.|Bulletin of the American Physical Society|2006Cited by 0