Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
F. Fischer(Schott (Germany)), K. Neumaier(Bavarian Academy of Sciences and Humanities), G. Abstreiter(Schott (Germany)), M. Grayson(Northwestern University), M. Bichler(Schott (Germany)), D. Schuh(Schott (Germany))
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