Metallic and insulating states at a bent quantum Hall junctionM. Grayson, G. Abstreiter, Lutz Hoeppel et al.|Physical Review B|2007Cited by 30
Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°M. Grayson, G. Abstreiter, M. Bichler et al.|Applied Physics Letters|2005Cited by 23
Quantum Hall effect in a two-dimensional electron system bent by 90°M. Grayson, K. von Klitzing, J. H. Smet et al.|Physica E Low-dimensional Systems and Nanostructures|2004Cited by 21
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructuresF. Fischer, K. Neumaier, M. Grayson et al.|Applied Physics Letters|2005Cited by 20
Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)BFlorian Herzog, M. Grayson, Wei Zhou et al.|Applied Physics Letters|2012Cited by 19