Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM DevicesDi Fu, Litian Liu, Jiebin Niu et al.|IEEE Electron Device Letters|2011Cited by 55
Scaling-down characteristics of nanoscale diamond-like carbon based resistive switching memoriesJianlong Xu, Litian Liu, Chenhui Zhang et al.|Carbon|2014Cited by 37
A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversionShengjun Qin, Zhiping Yu, Jinyu Zhang et al.|Nanoscale|2012Cited by 24
Buffer layer dependence of B<inf>3.15</inf>Nd<inf>0.85</inf>Ti<inf>3</inf>O<inf>12</inf> (BNdT) based MFIS capacitor for FeFET applicationYafeng Luo, Litian Liu, Rui Song et al.|Unknown|2008Cited by 1
Inducing Layer Dependence of BiFeO<sub>3</sub> Based Multilayer CapacitorsYa Feng Luo, Li Tian Liu, Dan Xie et al.|Advanced materials research|2009Cited by 1