Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN TemplateXie Xin-Jian, Cao Xian-Cun, Fei Zhong et al.|Chinese Physics Letters|2006Cited by 5
Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxyYuqi Wang, Fei Zhong, LI Xin-hua et al.|Chinese Physics|2007Cited by 4
Polarity Analysis of Self-Seeded Aluminum Nitride Crystals Grown by SublimationQifeng Han, Yuqi Wang, Changjian Ji et al.|Journal of Electronic Materials|2008Cited by 1
Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by SublimationQifeng Han, Yuqi Wang, Duan Cheng-Hong et al.|Chinese Physics Letters|2007Cited by 0
Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPEChenghong Duan, Yuqi Wang, LI Xin-hua et al.|Unknown|2008Cited by 0