Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy
Yuqi Wang(Harbin Institute of Technology), Cao Xian-Cun(Chinese Academy of Sciences), Changjian Ji(University of Jinan), Zhijun Yin(Chinese Academy of Sciences), Jiarong Chen(China National Rice Research Institute), Qifeng Han(Chinese Academy of Sciences), Fei Zhong(Anhui Medical University), LI Xin-hua(Chinese Academy of Sciences)
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