Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template
Xie Xin-Jian(Chinese Academy of Sciences), Cao Xian-Cun(Chinese Academy of Sciences), Zhijun Yin(Chinese Academy of Sciences), Yuqi Wang(Harbin Institute of Technology), Guifeng Liu(Chinese Academy of Sciences), Jiarong Chen(China National Rice Research Institute), Qifeng Han(Chinese Academy of Sciences), LI Xin-hua(Chinese Academy of Sciences), Fei Zhong(Chinese Academy of Sciences), Changjian Ji(University of Jinan)
Cited by 5
Related Papers
Monolayer PtSe<sub>2</sub>, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
|Nano Letters|2015|692
Antagonism of Two Plant-Growth Promoting Bacillus velezensis Isolates Against Ralstonia solanacearum and Fusarium oxysporum
|Scientific Reports|2018|368
Self-healing polyurethane with high strength and toughness based on a dynamic chemical strategy
|Journal of Materials Chemistry A|2022|282
Chemical Recycling of Carbon Fiber Reinforced Epoxy Resin Composites via Selective Cleavage of the Carbon–Nitrogen Bond
|ACS Sustainable Chemistry & Engineering|2015|236
Weak Solvent–Solvent Interaction Enables High Stability of Battery Electrolyte
|ACS Energy Letters|2023|194