High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor depositionQingyun Sun, Shusen Li, Song Zhang et al.|Journal of the American Ceramic Society|2017Cited by 22
Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H <sub>2</sub>Qingfang Xu, Hitoshi Ohmori, Peipei Zhu et al.|Journal of the American Ceramic Society|2017Cited by 16