High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition
Qingyun Sun(Wuhan University of Technology), Shusen Li, Haiwen Li(Sun Yat-sen University), Song Zhang(Nanjing University), Peipei Zhu(Wuhan University of Technology), Lianmeng Zhang(Wuhan University of Technology), Takashi Goto(Yokohama National University), Ji Shi(Quality Enhancement Research Initiative), Jiasheng Yan(The Ohio State University), Qingfang Xu(Wuhan University of Technology), Rong Tu(Wuhan University of Technology)
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