Linear Scaling of Reset Current Down to 22-nm Node for a Novel $\hbox{Cu}_{x}\hbox{Si}_{y}\hbox{O}$ RRAMYang Li, Jin Wu, Yali Song et al.|IEEE Electron Device Letters|2011Cited by 23
Fast step-down set algorithm of resistive switching memory with low programming energy and significant reliability improvementYing Shirley Meng, Jin Wu, Xiaoyong Xue et al.|Unknown|2014Cited by 9
A logic-based embedded DRAM with novel cell structure and dynamically adaptive refresh for long data retention, zero data availability penalty and high yieldXiaoyong Xue, Jin Wu, Chunling Dong et al.|Unknown|2013Cited by 0
Core Impurity Transport in C-Mod L-, I- and H-mode PlasmasJ. E. Rice, S. Wukitch, A. Hubbard et al.|Bulletin of the American Physical Society|2014Cited by 0