Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax

Hongming Lyu(Institute of Microelectronics), He Qian(University of Science and Technology of China), Zhiping Yu(Beijing Microelectronics Technology Institute), Jinyu Zhang(Institute of Microelectronics), Junfeng Li(Chinese Academy of Sciences), Huaqiang Wu(Tsinghua University), Xiaoming Wu(Institute of Microelectronics), Jinbiao Liu(Chinese Academy of Sciences), Jiebin Niu(Chinese Academy of Sciences), Qi Lu(China University of Petroleum, Beijing)
Scientific Reports
October 24, 2016
10.1038/srep35717
Cited by 31

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