Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellH.C. Ma, Chih-Yuan Lu, S.H. Ku et al.|IEEE Electron Device Letters|2009Cited by 5
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memoryJ.P. Chiu, Chih-Yuan Lu, You-Liang Chou et al.|Unknown|2009Cited by 3