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The role of oxygen on the stability of gettering of metals to cavities in siliconJ. S. Williams, D. C. Jacobson, M. Conway et al.|Applied Physics Letters|1999Cited by 25
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Spatial selectivity of impurity free vacancy disordering using different dielectric layers for photonic/optoelectronic integrated circuitsLan Fu, C. Jagadish, Peter J. Reece et al.|Unknown|2004Cited by 0