Study and estimation of the residual stress in porous silicon layer formed on the surface of a crystalline silicon substrateM Ghannam, Robert Mertens, G. Beaucarne et al.|Thin Solid Films|2008Cited by 8
A quantitative stress-related model for the evolution of the pore size in porous silicon during high temperature annealingMoustafa M. Hassan, Robert Mertens, Jef Poortmans et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|2006Cited by 7
Modeling of Horizontal Pore Channeling During High Temperature Annealing of Porous Silicon With Initial Vertical Columnar MacroporesM Ghannam, Robert Mertens, Jef Poortmans et al.|EU PVSEC|2008Cited by 0
Quantitative study of the structural evolution of porous silicon during high temperature annealingM Ghannam, Robert Mertens, Mostafa Hassan et al.|Unknown|2006Cited by 0