A quantitative stress-related model for the evolution of the pore size in porous silicon during high temperature annealing
Moustafa M. Hassan(American University in Cairo), Robert Mertens(Humboldt-Universität zu Berlin), Jef Poortmans(IMEC), M Ghannam(Kuwait University)
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
November 15, 2006
Cited by 7
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