Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAMStefano Ambrogio, Daniele Ielmini, Simone Balatti et al.|IEEE Transactions on Electron Devices|2016Cited by 250
Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset VariabilityStefano Ambrogio, Daniele Ielmini, Alessandro Calderoni et al.|IEEE Transactions on Electron Devices|2014Cited by 220
Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive SwitchesStefano Ambrogio, Daniele Ielmini, D. C. Gilmer et al.|IEEE Transactions on Electron Devices|2014Cited by 145
True Random Number Generation by Variability of Resistive Switching in Oxide-Based DevicesSimone Balatti, Daniele Ielmini, Stefano Ambrogio et al.|IEEE Journal on Emerging and Selected Topics in Circuits and Systems|2015Cited by 139
Statistical Fluctuations in HfO<sub><i>x</i></sub> Resistive-Switching Memory: Part II—Random Telegraph NoiseStefano Ambrogio, Daniele Ielmini, Nirmal Ramaswamy et al.|IEEE Transactions on Electron Devices|2014Cited by 128